AlxGa1-xN/InyGa1-yN DBR resonant-cavity"/>

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Monolithic white LED based on AlxGa1-xN/InyGa1-yN DBR resonant-cavity

Chen Yu, Huang Lirong and Zhu Shanshan

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Abstract:

A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been designed and studied. With the AlGaN/InGaN distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.

Key words: monolithic white light-emitting diode distributed Bragg reflector resonant-cavity

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    Received: 18 August 2015 Revised: Online: Published: 01 January 2009

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      Chen Yu, Huang Lirong, Zhu Shanshan. Monolithic white LED based on AlxGa1-xN/InyGa1-yN DBR resonant-cavity[J]. Journal of Semiconductors, 2009, 30(1): 014005. doi: 10.1088/1674-4926/30/1/014005 Chen Y, Huang L R, Zhu S S. Monolithic white LED based on AlxGaN1-x/InyGa1-yN DBR resonant-cavity[J]. J. Semicond., 2009, 30(1): 014005. doi: 10.1088/1674-4926/30/1/014005.Export: BibTex EndNote
      Citation:
      Chen Yu, Huang Lirong, Zhu Shanshan. Monolithic white LED based on AlxGa1-xN/InyGa1-yN DBR resonant-cavity[J]. Journal of Semiconductors, 2009, 30(1): 014005. doi: 10.1088/1674-4926/30/1/014005

      Chen Y, Huang L R, Zhu S S. Monolithic white LED based on AlxGaN1-x/InyGa1-yN DBR resonant-cavity[J]. J. Semicond., 2009, 30(1): 014005. doi: 10.1088/1674-4926/30/1/014005.
      Export: BibTex EndNote

      Monolithic white LED based on AlxGa1-xN/InyGa1-yN DBR resonant-cavity

      doi: 10.1088/1674-4926/30/1/014005
      • Received Date: 2015-08-18

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