SEMICONDUCTOR DEVICES

A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

Guo Yufeng, Wang Zhigong and Sheu Gene

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Abstract: This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N+N and P+N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications.

Key words: SOI

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    Received: 18 August 2015 Revised: 03 July 2009 Online: Published: 01 November 2009

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      Guo Yufeng, Wang Zhigong, Sheu Gene. A three-dimensional breakdown model of SOI lateral power transistors with a circular layout[J]. Journal of Semiconductors, 2009, 30(11): 114006. doi: 10.1088/1674-4926/30/11/114006 Guo Y F, Wang Z G, Sheu G. A three-dimensional breakdown model of SOI lateral power transistors with a circular layout[J]. J. Semicond., 2009, 30(11): 114006. doi: 10.1088/1674-4926/30/11/114006.Export: BibTex EndNote
      Citation:
      Guo Yufeng, Wang Zhigong, Sheu Gene. A three-dimensional breakdown model of SOI lateral power transistors with a circular layout[J]. Journal of Semiconductors, 2009, 30(11): 114006. doi: 10.1088/1674-4926/30/11/114006

      Guo Y F, Wang Z G, Sheu G. A three-dimensional breakdown model of SOI lateral power transistors with a circular layout[J]. J. Semicond., 2009, 30(11): 114006. doi: 10.1088/1674-4926/30/11/114006.
      Export: BibTex EndNote

      A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

      doi: 10.1088/1674-4926/30/11/114006
      • Received Date: 2015-08-18
      • Accepted Date: 2009-05-14
      • Revised Date: 2009-07-03
      • Published Date: 2009-10-29

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