| Citation: |
Zhang Yang, Zhang Renping, Han Weihua, Liu Jian, Yang Xiang, Wang Ying, Li Chian Chiu, Yang Fuhua. Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure[J]. Journal of Semiconductors, 2009, 30(11): 116001. doi: 10.1088/1674-4926/30/11/116001
Zhang Y, Zhang R P, Han W H, Liu J, Yang X, Wang Y, Li C C, Yang F H. Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure[J]. J. Semicond., 2009, 30(11): 116001. doi: 10.1088/1674-4926/30/11/116001.
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Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure
doi: 10.1088/1674-4926/30/11/116001
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Abstract
A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly cross-linked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate. -
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