SEMICONDUCTOR INTEGRATED CIRCUITS

A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs

Zhao Zhenyu, Zhang Minxuan, Chen Shuming, Chen Jihua and Li Junfeng

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Abstract: A radiation-hardened-by-design (RHBD) technique for phase-locked loops (PLLs) has been developed for single-event transient (SET) mitigation. By presenting a novel SET-resistant complementary current limiter (CCL) and implementing it between the charge pump (CP) and the loop filter (LPF), the PLL’s single-event susceptibility is significantly decreased in the presence of SETs in CPs, whereas it has little impact on the loop parameters in the absence of SETs in CPs. Transistor-level simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator (VCO) by up to 93.1% and reduce the recovery time of the PLL by up to 79.0%. Moreover, the CCL circuit can also accelerate the PLL recovery procedure from loss of lock due to phase or frequency shift, as well as a single-event strike.

Key words: charge pump

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    Received: 18 August 2015 Revised: 08 July 2009 Online: Published: 01 December 2009

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      Zhao Zhenyu, Zhang Minxuan, Chen Shuming, Chen Jihua, Li Junfeng. A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs[J]. Journal of Semiconductors, 2009, 30(12): 125009. doi: 10.1088/1674-4926/30/12/125009 Zhao Z Y, Zhang M X, Chen S M, Chen J H, Li J F. A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs[J]. J. Semicond., 2009, 30(12): 125009. doi: 10.1088/1674-4926/30/12/125009.Export: BibTex EndNote
      Citation:
      Zhao Zhenyu, Zhang Minxuan, Chen Shuming, Chen Jihua, Li Junfeng. A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs[J]. Journal of Semiconductors, 2009, 30(12): 125009. doi: 10.1088/1674-4926/30/12/125009

      Zhao Z Y, Zhang M X, Chen S M, Chen J H, Li J F. A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs[J]. J. Semicond., 2009, 30(12): 125009. doi: 10.1088/1674-4926/30/12/125009.
      Export: BibTex EndNote

      A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs

      doi: 10.1088/1674-4926/30/12/125009
      • Received Date: 2015-08-18
      • Accepted Date: 2009-06-08
      • Revised Date: 2009-07-08
      • Published Date: 2009-12-04

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