SEMICONDUCTOR MATERIALS

Thermal stability of HfTaON films prepared by physical vapor deposition

Xu Gaobo and Xu Qiuxia

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Abstract: We investigate the thermal stability of HfTaON films prepared by physical vapor deposition using high resolution transmission electronic microscope (HRTEM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the magnetron-sputtered HfTaON films on Si substrate are not stable during the post-deposition annealing (PDA). HfTaON will react with Si and form the interfacial layer at the interface between HfTaON and Si substrate. Hf–N bonds are not stale at high temperature and easily replaced by oxygen, resulting in significant loss of nitrogen from the bulk film. SiO buffer layer introduction at the interface of HfTaON and Si substrate may effectively suppress their reaction and control the formation of thicker interfacial layer. But SiO is a low k gate dielectric and too thicker SiO buffer layer will increase the gate dielectric's equivalent oxide thickness. SiON prepared by oxidation of N-implanted Si substrate has thinner physical thickness than SiO and is helpful to reduce the gate dielectric's equivalent oxide thickness.

Key words: HfTaON

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    Received: 18 August 2015 Revised: 21 October 2008 Online: Published: 01 February 2009

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      Xu Gaobo, Xu Qiuxia. Thermal stability of HfTaON films prepared by physical vapor deposition[J]. Journal of Semiconductors, 2009, 30(2): 023002. doi: 10.1088/1674-4926/30/2/023002 Xu G B, Xu Q X. Thermal stability of HfTaON films prepared by physical vapor deposition[J]. J. Semicond., 2009, 30(2): 023002. doi:  10.1088/1674-4926/30/2/023002.Export: BibTex EndNote
      Citation:
      Xu Gaobo, Xu Qiuxia. Thermal stability of HfTaON films prepared by physical vapor deposition[J]. Journal of Semiconductors, 2009, 30(2): 023002. doi: 10.1088/1674-4926/30/2/023002

      Xu G B, Xu Q X. Thermal stability of HfTaON films prepared by physical vapor deposition[J]. J. Semicond., 2009, 30(2): 023002. doi:  10.1088/1674-4926/30/2/023002.
      Export: BibTex EndNote

      Thermal stability of HfTaON films prepared by physical vapor deposition

      doi: 10.1088/1674-4926/30/2/023002
      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-09
      • Revised Date: 2008-10-21
      • Published Date: 2009-03-12

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