SEMICONDUCTOR MATERIALS

Chemical mechanical polishing of freestanding GaN substrates

Yan Huaiyue, Xiu Xiangqian, Liu Zhanhui, Zhang Rong, Hua Xuemei, Xie Zili, Han Ping, Shi Yi and Zheng Youdou

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Abstract: Chemical mechanical polishing (CMP) has been used to produce smooth and scratch-free surfaces for GaN. In the aqueous solution of KOH, GaN is subjected to etching. At the same time, all surface irregularities, including etch pyramids, roughness after mechanical polishing and so on will be removed by a polishing pad. The experiments had been performed under the condition of different abrasive particle sizes of the polishing pad. Also the polishing results for different polishing times are analyzed, and chemical mechanical polishing resulted in an average root mean square (RMS) surface roughness of 0.565 nm, as measured by atomic force microscopy.

Key words: GaN chemical mechanical polishing epitaxial layers

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    Received: 18 August 2015 Revised: 15 October 2008 Online: Published: 01 February 2009

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      Yan Huaiyue, Xiu Xiangqian, Liu Zhanhui, Zhang Rong, Hua Xuemei, Xie Zili, Han Ping, Shi Yi, Zheng Youdou. Chemical mechanical polishing of freestanding GaN substrates[J]. Journal of Semiconductors, 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003 Yan H Y, Xiu X Q, Liu Z H, Zhang R, Hua X M, Xie Z L, Han P, Shi Y, Zheng Y D. Chemical mechanical polishing of freestanding GaN substrates[J]. J. Semicond., 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003.Export: BibTex EndNote
      Citation:
      Yan Huaiyue, Xiu Xiangqian, Liu Zhanhui, Zhang Rong, Hua Xuemei, Xie Zili, Han Ping, Shi Yi, Zheng Youdou. Chemical mechanical polishing of freestanding GaN substrates[J]. Journal of Semiconductors, 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003

      Yan H Y, Xiu X Q, Liu Z H, Zhang R, Hua X M, Xie Z L, Han P, Shi Y, Zheng Y D. Chemical mechanical polishing of freestanding GaN substrates[J]. J. Semicond., 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003.
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      Chemical mechanical polishing of freestanding GaN substrates

      doi: 10.1088/1674-4926/30/2/023003
      • Received Date: 2015-08-18
      • Accepted Date: 2008-07-24
      • Revised Date: 2008-10-15
      • Published Date: 2009-02-16

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