| Citation: |
Jia Renxu, Zhang Yimen, Zhang Yuming, Wang Yuehu, Zhang Lin. Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer[J]. Journal of Semiconductors, 2009, 30(3): 033003. doi: 10.1088/1674-4926/30/3/033003
Jia R X, Zhang Y M, Zhang Y M, Wang Y H, Zhang L. Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer[J]. J. Semicond., 2009, 30(3): 033003. doi: 10.1088/1674-4926/30/3/033003.
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Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer
doi: 10.1088/1674-4926/30/3/033003
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Abstract
Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition (HWCVD) have been studied using photoluminescence (PL) technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon (VC) are revealed by electron spin resonance (ESR) technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other.-
Keywords:
- 4H-SiC Homoepitaxial layers
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References
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Proportional views
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