| Citation: |
Wang Lei, Gao Chao, Liu Bo, Hu Jian, Lee Po, Ju Xiaohua, Zhang Meili, Li Wenjun, Yang Steve. Silicide-block-film effects on high voltage drain-extended MOS transistors[J]. Journal of Semiconductors, 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003
Wang L, Gao C, Liu B, Hu J, Lee P, Ju X H, Zhang M L, Li W J, Yang S. Silicide-block-film effects on high voltage drain-extended MOS transistors[J]. J. Semicond., 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003.
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Silicide-block-film effects on high voltage drain-extended MOS transistors
doi: 10.1088/1674-4926/30/3/034003
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Abstract
Silicide-block-film effects on drain-extended MOS (DEMOS) transistors were comparatively investigated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide (SRO). The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier-injection (HCI) induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area.-
Keywords:
- DEMOS
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References
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Proportional views
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