SEMICONDUCTOR MATERIALS

Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire

Xu Shengrui, Hao Yue, Duan Huantao, Zhang Jincheng, Zhang Jinfeng, Zhou Xiaowei, Li Zhiming and Ni Jinyu

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Abstract: Nonpolara-plane [11-20] GaN has been grown onr-plane [1-102] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to thec-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used fora-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved.

Key words: GaN

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    Received: 18 August 2015 Revised: 19 November 2008 Online: Published: 01 April 2009

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      Xu Shengrui, Hao Yue, Duan Huantao, Zhang Jincheng, Zhang Jinfeng, Zhou Xiaowei, Li Zhiming, Ni Jinyu. Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire[J]. Journal of Semiconductors, 2009, 30(4): 043003. doi: 10.1088/1674-4926/30/4/043003 Xu S R, Hao Y, Duan H T, Zhang J C, Zhang J F, Zhou X W, Li Z M, Ni J Y. Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire[J]. J. Semicond., 2009, 30(4): 043003. doi:  10.1088/1674-4926/30/4/043003.Export: BibTex EndNote
      Citation:
      Xu Shengrui, Hao Yue, Duan Huantao, Zhang Jincheng, Zhang Jinfeng, Zhou Xiaowei, Li Zhiming, Ni Jinyu. Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire[J]. Journal of Semiconductors, 2009, 30(4): 043003. doi: 10.1088/1674-4926/30/4/043003

      Xu S R, Hao Y, Duan H T, Zhang J C, Zhang J F, Zhou X W, Li Z M, Ni J Y. Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire[J]. J. Semicond., 2009, 30(4): 043003. doi:  10.1088/1674-4926/30/4/043003.
      Export: BibTex EndNote

      Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire

      doi: 10.1088/1674-4926/30/4/043003
      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-08
      • Revised Date: 2008-11-19
      • Published Date: 2009-04-07

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