| Citation: |
Gu Wenping, Chen Chi, Duan Huantao, Hao Yue, Zhang Jincheng, Wang Chong, Feng Qian, Ma Xiaohua. 60Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2009, 30(4): 044002. doi: 10.1088/1674-4926/30/4/044002
Gu W P, Chen C, Duan H T, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H. 60Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors[J]. J. Semicond., 2009, 30(4): 044002. doi: 10.1088/1674-4926/30/4/044002.
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60Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors
doi: 10.1088/1674-4926/30/4/044002
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Abstract
Unpassivated/passivated AlGaN/GaN high electron mobility transistors (HEMTs) were exposed to 1.25 MeV 60Co γ-rays at a dose of 1 Mrad(Si). The saturation drain current of the unpassivated devices decreased by 15% at 1 Mrad-dose, and the maximal transconductance decreased by 9.1% under the same condition; moreover, either forward or reverse gate bias current was significantly increased, while the threshold voltage is relatively unaffected. By sharp contrast, the passivated devices showed scarcely any change in saturation drain current and maximal transconductance at the same dose. Based on the differences between the passivated HEMTs and un-passivated HEMTs, adding the C–V measurement results, the obviously parameter degradation of the unpassivated AlGaN/GaN HEMTs is believed to be caused by the creation of electronegative surface state charges in source–gate spacer and gate–drain spacer at the low dose (1 Mrad). These results reveal that the passivation is effective in reducing the effects of surface state charges induced by the 60Co γ-rays irradiation, so the passivation is an effective reinforced approach.-
Keywords:
- AlGaN/GaN HEMTs
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References
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