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Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH

Ji Tao, Yang Licheng, Li Hairong, He Shanhu and Li Siyuan

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Abstract: Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor (SIPTH) have been experimentally and theoretically studied. As the gate current of SIPTH is increased by the light irradiation, the potential barrier in the channel is reduced due to the increase in voltage drop across the gate series resistance. Therefore, SIPTH can be quickly switched from the blocking state to the conducting state by relatively low anode voltage. The optimal matching relation for controlling anode conducting voltage of SIPTH by light irradiation has also been represented.

Key words: static induction photosensitive thyristors gate series resistance double injection effect potential bar- rier light-generated carriers

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    Received: 18 August 2015 Revised: 27 October 2008 Online: Published: 01 April 2009

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      Ji Tao, Yang Licheng, Li Hairong, He Shanhu, Li Siyuan. Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH[J]. Journal of Semiconductors, 2009, 30(4): 044006. doi: 10.1088/1674-4926/30/4/044006 Ji T, Yang L C, Li H R, He S H, Li S Y. Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH[J]. J. Semicond., 2009, 30(4): 044006. doi: 10.1088/1674-4926/30/4/044006.Export: BibTex EndNote
      Citation:
      Ji Tao, Yang Licheng, Li Hairong, He Shanhu, Li Siyuan. Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH[J]. Journal of Semiconductors, 2009, 30(4): 044006. doi: 10.1088/1674-4926/30/4/044006

      Ji T, Yang L C, Li H R, He S H, Li S Y. Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH[J]. J. Semicond., 2009, 30(4): 044006. doi: 10.1088/1674-4926/30/4/044006.
      Export: BibTex EndNote

      Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH

      doi: 10.1088/1674-4926/30/4/044006
      • Received Date: 2015-08-18
      • Accepted Date: 2008-10-06
      • Revised Date: 2008-10-27
      • Published Date: 2009-04-07

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