SEMICONDUCTOR PHYSICS

Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction

Liu Hongxia, Zhang Heming and Zhang Zhiyong

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Abstract: A two-probe system of the heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) was established based on its optimized structure. By using a method combining nonequilibrium Green's function (NEGF) with density functional theory (DFT), the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital (HOMO) has a higher electron density on the CNT section and the lowest unoccupied molecular orbital (LUMO) mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are +1.8 and -2.2 V, respectively.

Key words: carbon/silicon carbide nanotube heterojunction nonequilibrium Green's function transport properties

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    Received: 18 August 2015 Revised: 28 December 2008 Online: Published: 01 May 2009

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      Liu Hongxia, Zhang Heming, Zhang Zhiyong. Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction[J]. Journal of Semiconductors, 2009, 30(5): 052002. doi: 10.1088/1674-4926/30/5/052002 Liu H X, Zhang H M, Zhang Z Y. Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction[J]. J. Semicond., 2009, 30(5): 052002. doi: 10.1088/1674-4926/30/5/052002.Export: BibTex EndNote
      Citation:
      Liu Hongxia, Zhang Heming, Zhang Zhiyong. Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction[J]. Journal of Semiconductors, 2009, 30(5): 052002. doi: 10.1088/1674-4926/30/5/052002

      Liu H X, Zhang H M, Zhang Z Y. Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction[J]. J. Semicond., 2009, 30(5): 052002. doi: 10.1088/1674-4926/30/5/052002.
      Export: BibTex EndNote

      Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction

      doi: 10.1088/1674-4926/30/5/052002
      • Received Date: 2015-08-18
      • Accepted Date: 2008-11-09
      • Revised Date: 2008-12-28
      • Published Date: 2009-04-20

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