| Citation: |
Zhang Jian, Li Tingju, Ma Xiaodong, Luo Dawei, Liu Ning, Liu Dehua. Optimization of the acid leaching process by using an ultrasonic field for metallurgical grade silicon[J]. Journal of Semiconductors, 2009, 30(5): 053002. doi: 10.1088/1674-4926/30/5/053002
Zhang J, Li T J, Ma X D, Luo D W, Liu N, Liu D H. Optimization of the acid leaching process by using an ultrasonic field for metallurgical grade silicon[J]. J. Semicond., 2009, 30(5): 053002. doi: 10.1088/1674-4926/30/5/053002.
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Optimization of the acid leaching process by using an ultrasonic field for metallurgical grade silicon
doi: 10.1088/1674-4926/30/5/053002
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Abstract
In the experiment, acid leaching under an ultrasonic field (20 kHz, 80 W) was used to remove Al, Fe, and Ti impurities in metallurgical grade silicon (MG-Si). The effects of the acid leaching process parameters, including the particle size of silicon, the acid type (HCl, HNO3, HF) and the leaching time on the purification of MG-Si were investigated. The results show that HCl leaching, an initial size of 0.1 mm for the silicon particles, and 8 h of leaching time are the optimum parameters to purify MG-Si. The acid leaching process under an ultrasonic field is more effective than the acid leaching under magnetic stirring, the mechanism of which is preliminarily discussed. -
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