| Citation: |
Wu Tuo, Chen Hongyi, Qian Dahong. Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers[J]. Journal of Semiconductors, 2009, 30(5): 055002. doi: 10.1088/1674-4926/30/5/055002
Wu T, Chen H Y, Qian D H. Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers[J]. J. Semicond., 2009, 30(5): 055002. doi: 10.1088/1674-4926/30/5/055002.
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Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers
doi: 10.1088/1674-4926/30/5/055002
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Abstract
Based on the Gummel–Poon model of BJT, the change of the DC bias as a function of the AC input signal in RF linear power amplifiers is theoretically derived, so that the linearity of different DC bias circuits can be interpreted and compared. According to the analysis results, a quantitative adaptive DC bias circuit is proposed, which can improve the linearity and efficiency. From the simulation and test results, we draw conclusions on how to improve the design of linear power amplifier.-
Keywords:
- bipolar
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References
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