SEMICONDUCTOR DEVICES

Characteristics of vertical double-gate dual-strained-channel MOSFETs

Gao Yong, Yang Jing, Yang Yuan and Liu Jing

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Abstract: A novel device structure with a vertical double-gate and dual-strained channel is presented. The electri-cal characteristics of this device with a gate length of 100 nm are simulated. With a Ge content of 20%, the drain currents of the strained-Si NMOSFET and the strained-SiGe PMOSFET compared to the universal SOI MOSFETs are enhanced by 26% and 33%, respectively; the risetime and the falltime of the strained-channel CMOS are greatly decreased by 50% and 25.47% compared to their traditional Si channel counterparts. The simulation results show that the vertical double-gate (DG) dual-strained-channel MOSFETs exhibit better drive capability, a higher transcon-ductance, and a faster circuit speed for CMOS compared to conventional-Si MOSFETs. The new structure can be achieved by today's semiconductor manufacturing level.

Key words: vertical double-gate dual-strained-channel

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    Received: 18 August 2015 Revised: 02 February 2009 Online: Published: 01 June 2009

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      Gao Yong, Yang Jing, Yang Yuan, Liu Jing. Characteristics of vertical double-gate dual-strained-channel MOSFETs[J]. Journal of Semiconductors, 2009, 30(6): 064002. doi: 10.1088/1674-4926/30/6/064002 Gao Y, Yang J, Yang Y, Liu J. Characteristics of vertical double-gate dual-strained-channel MOSFETs[J]. J. Semicond., 2009, 30(6): 064002. doi: 10.1088/1674-4926/30/6/064002.Export: BibTex EndNote
      Citation:
      Gao Yong, Yang Jing, Yang Yuan, Liu Jing. Characteristics of vertical double-gate dual-strained-channel MOSFETs[J]. Journal of Semiconductors, 2009, 30(6): 064002. doi: 10.1088/1674-4926/30/6/064002

      Gao Y, Yang J, Yang Y, Liu J. Characteristics of vertical double-gate dual-strained-channel MOSFETs[J]. J. Semicond., 2009, 30(6): 064002. doi: 10.1088/1674-4926/30/6/064002.
      Export: BibTex EndNote

      Characteristics of vertical double-gate dual-strained-channel MOSFETs

      doi: 10.1088/1674-4926/30/6/064002
      • Received Date: 2015-08-18
      • Accepted Date: 2008-10-10
      • Revised Date: 2009-02-02
      • Published Date: 2009-07-13

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