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Influence of electron irradiation on the switching speed in insulated gate bipolar transistors

Lu Shuojin, Wang Lixin, Lu Jiang, Liu Gang and Han Zhengsheng

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Abstract: The influence of electron irradiation on the switching speed in insulated gate bipolar transistors (IGBT) with different epitaxial layer thicknesses is discussed in detail. The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer. However, there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses. The increase in switching speed of the IGBT is accompanied by an increase in the forward drop, and a trade-off curve between forward voltage drop and fall time of IGBT is presented.

Key words: electron irradiation fall time switching speed IGBT

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    Received: 18 August 2015 Revised: 11 February 2009 Online: Published: 01 June 2009

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      Lu Shuojin, Wang Lixin, Lu Jiang, Liu Gang, Han Zhengsheng. Influence of electron irradiation on the switching speed in insulated gate bipolar transistors[J]. Journal of Semiconductors, 2009, 30(6): 064008. doi: 10.1088/1674-4926/30/6/064008 Lu S J, Wang L X, Lu J, Liu G, Han Z S. Influence of electron irradiation on the switching speed in insulated gate bipolar transistors[J]. J. Semicond., 2009, 30(6): 064008. doi: 10.1088/1674-4926/30/6/064008.Export: BibTex EndNote
      Citation:
      Lu Shuojin, Wang Lixin, Lu Jiang, Liu Gang, Han Zhengsheng. Influence of electron irradiation on the switching speed in insulated gate bipolar transistors[J]. Journal of Semiconductors, 2009, 30(6): 064008. doi: 10.1088/1674-4926/30/6/064008

      Lu S J, Wang L X, Lu J, Liu G, Han Z S. Influence of electron irradiation on the switching speed in insulated gate bipolar transistors[J]. J. Semicond., 2009, 30(6): 064008. doi: 10.1088/1674-4926/30/6/064008.
      Export: BibTex EndNote

      Influence of electron irradiation on the switching speed in insulated gate bipolar transistors

      doi: 10.1088/1674-4926/30/6/064008
      • Received Date: 2015-08-18
      • Accepted Date: 2009-01-08
      • Revised Date: 2009-02-11
      • Published Date: 2009-07-13

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