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Experimental study on the single event latchup simulated by a pulse laser

Yang Shiyu, Cao Zhou, Li Danming, Xue Yuxiong and Tian Kai

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Abstract: This paper introduces major characteristics of the single event latchup (SEL) in CMOS devices. We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser. The laser simulation results give the energy threshold for samples to undergo SEL. SEL current pulses are measured for CMOS devices in the latchup state, the sensitive areas in the devices are acquired, the major traits, causing large scale circuits to undergo SEL, are summarized, and the test equivalence between a pulse laser and ions is also analyzed.

Key words: single event effect

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    Received: 18 August 2015 Revised: 09 November 2008 Online: Published: 01 June 2009

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      Yang Shiyu, Cao Zhou, Li Danming, Xue Yuxiong, Tian Kai. Experimental study on the single event latchup simulated by a pulse laser[J]. Journal of Semiconductors, 2009, 30(6): 064009. doi: 10.1088/1674-4926/30/6/064009 Yang S Y, Cao Z, Li D M, Xue Y X, Tian K. Experimental study on the single event latchup simulated by a pulse laser[J]. J. Semicond., 2009, 30(6): 064009. doi: 10.1088/1674-4926/30/6/064009.Export: BibTex EndNote
      Citation:
      Yang Shiyu, Cao Zhou, Li Danming, Xue Yuxiong, Tian Kai. Experimental study on the single event latchup simulated by a pulse laser[J]. Journal of Semiconductors, 2009, 30(6): 064009. doi: 10.1088/1674-4926/30/6/064009

      Yang S Y, Cao Z, Li D M, Xue Y X, Tian K. Experimental study on the single event latchup simulated by a pulse laser[J]. J. Semicond., 2009, 30(6): 064009. doi: 10.1088/1674-4926/30/6/064009.
      Export: BibTex EndNote

      Experimental study on the single event latchup simulated by a pulse laser

      doi: 10.1088/1674-4926/30/6/064009
      • Received Date: 2015-08-18
      • Accepted Date: 2008-05-29
      • Revised Date: 2008-11-09
      • Published Date: 2009-07-13

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