SEMICONDUCTOR INTEGRATED CIRCUITS

Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

Gao Tongqiang, Zhang Chun, Chi Baoyong and Wang Zhihua

+ Author Affiliations

PDF

Abstract: To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-μm CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

Key words: CMOS power amplifier RFID reader matching network

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3654 Times PDF downloads: 1944 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 16 December 2008 Online: Published: 01 June 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers[J]. Journal of Semiconductors, 2009, 30(6): 065008. doi: 10.1088/1674-4926/30/6/065008 Gao T Q, Zhang C, Chi B Y, Wang Z H. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers[J]. J. Semicond., 2009, 30(6): 065008. doi: 10.1088/1674-4926/30/6/065008.Export: BibTex EndNote
      Citation:
      Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers[J]. Journal of Semiconductors, 2009, 30(6): 065008. doi: 10.1088/1674-4926/30/6/065008

      Gao T Q, Zhang C, Chi B Y, Wang Z H. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers[J]. J. Semicond., 2009, 30(6): 065008. doi: 10.1088/1674-4926/30/6/065008.
      Export: BibTex EndNote

      Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

      doi: 10.1088/1674-4926/30/6/065008
      • Received Date: 2015-08-18
      • Accepted Date: 2008-08-29
      • Revised Date: 2008-12-16
      • Published Date: 2009-07-13

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return