SEMICONDUCTOR PHYSICS

Preparation and characterization of CuO nanowire arrays

Yu Dongliang, Ge Chuannan and Du Youwei

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Abstract: CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 ℃ in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current–voltage curve of the CuO nanowires is nonlinear.

Key words: nanowiresCuOsemiconductorscurrent–voltage characteristic

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    Received: 18 August 2015 Revised: 23 February 2009 Online: Published: 01 July 2009

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      Yu Dongliang, Ge Chuannan, Du Youwei. Preparation and characterization of CuO nanowire arrays[J]. Journal of Semiconductors, 2009, 30(7): 072003. doi: 10.1088/1674-4926/30/7/072003 Yu D L, Ge C N, Du Y W. Preparation and characterization of CuO nanowire arrays[J]. J. Semicond., 2009, 30(7): 072003. doi: 10.1088/1674-4926/30/7/072003.Export: BibTex EndNote
      Citation:
      Yu Dongliang, Ge Chuannan, Du Youwei. Preparation and characterization of CuO nanowire arrays[J]. Journal of Semiconductors, 2009, 30(7): 072003. doi: 10.1088/1674-4926/30/7/072003

      Yu D L, Ge C N, Du Y W. Preparation and characterization of CuO nanowire arrays[J]. J. Semicond., 2009, 30(7): 072003. doi: 10.1088/1674-4926/30/7/072003.
      Export: BibTex EndNote

      Preparation and characterization of CuO nanowire arrays

      doi: 10.1088/1674-4926/30/7/072003
      • Received Date: 2015-08-18
      • Accepted Date: 2009-01-09
      • Revised Date: 2009-02-23
      • Published Date: 2009-07-10

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