Abstract: An analytical DC model accounting for the self-heating effect of polycrystalline silicon thin-film transistors (poly-Si TFTs) is presented. In deriving the model for the self-heating effect, the temperature dependence of the effective mobility is studied in detail. Based on the mobility model and a first order approximation, a closed-form analytical drain current model considering the self-heating effect is derived. Compared with the available experimental data, the proposed model, which includes the self-heating and kink effects, provides an accurate description of the output characteristics over the linear, the saturation, and the kink regimes.

Key words: polycrystalline silicon thin film transistors,  self-heating,  surface potential