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Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion

Liu Biwei, Chen Shuming and Liang Bin

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Abstract: The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range of 200 to 420 K. Device simulation results show that the charge sharing collection increases by 66%–325% when the temperature rises. The LETth of a MBU in two SRAM cells and one DICE cell is also quantified. Besides charge sharing, the circuit response's temperature dependence also has a significant influence on the LETth.

Key words: charge sharing

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    Received: 18 August 2015 Revised: 14 January 2009 Online: Published: 01 July 2009

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      Liu Biwei, Chen Shuming, Liang Bin. Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion[J]. Journal of Semiconductors, 2009, 30(7): 074005. doi: 10.1088/1674-4926/30/7/074005 Liu B W, Chen S M, Liang B. Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion[J]. J. Semicond., 2009, 30(7): 074005. doi: 10.1088/1674-4926/30/7/074005.Export: BibTex EndNote
      Citation:
      Liu Biwei, Chen Shuming, Liang Bin. Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion[J]. Journal of Semiconductors, 2009, 30(7): 074005. doi: 10.1088/1674-4926/30/7/074005

      Liu B W, Chen S M, Liang B. Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion[J]. J. Semicond., 2009, 30(7): 074005. doi: 10.1088/1674-4926/30/7/074005.
      Export: BibTex EndNote

      Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion

      doi: 10.1088/1674-4926/30/7/074005
      • Received Date: 2015-08-18
      • Accepted Date: 2008-11-17
      • Revised Date: 2009-01-14
      • Published Date: 2009-07-10

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