SEMICONDUCTOR INTEGRATED CIRCUITS

A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

Duan Jihai, Wang Zhigong and Li Zhiqun

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Abstract: An RF transmitter is proposed for 35 GHz time-hopping ultra wideband (TH-UWB) wireless applications. The transmitter consists of a 4-GHz oscillator, a switch with a controllable attenuator and an output matching circuit. Through controlling the low frequency signals with time-hopping pulse position modulation (TH-PPM), the circuit supplies TH-UWB signals and can directly drive an antenna by a transmission line. The transmitter was implemented in a 0.18-μm CMOS technology, and the output amplitude is about 65 mV at a 50 Ω load from a 1.8-V supply, the return loss (S11) at the output port is less than -10dB, and the chip size is 0.7 × 0.8 mm2, with a power consumption of 12.3 mW.

Key words: complementary metal oxide semiconductor

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    Received: 18 August 2015 Revised: 25 March 2009 Online: Published: 01 July 2009

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      Duan Jihai, Wang Zhigong, Li Zhiqun. A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology[J]. Journal of Semiconductors, 2009, 30(7): 075006. doi: 10.1088/1674-4926/30/7/075006 Duan J H, Wang Z G, Li Z Q. A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology[J]. J. Semicond., 2009, 30(7): 075006. doi:  10.1088/1674-4926/30/7/075006.Export: BibTex EndNote
      Citation:
      Duan Jihai, Wang Zhigong, Li Zhiqun. A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology[J]. Journal of Semiconductors, 2009, 30(7): 075006. doi: 10.1088/1674-4926/30/7/075006

      Duan J H, Wang Z G, Li Z Q. A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology[J]. J. Semicond., 2009, 30(7): 075006. doi:  10.1088/1674-4926/30/7/075006.
      Export: BibTex EndNote

      A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

      doi: 10.1088/1674-4926/30/7/075006
      • Received Date: 2015-08-18
      • Accepted Date: 2009-02-02
      • Revised Date: 2009-03-25
      • Published Date: 2009-07-10

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