| Citation: |
Jiang Ran, Zhang Yan. Visible photoluminescence of porous silicon covered with an HfON dielectric layer[J]. Journal of Semiconductors, 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003
Jiang R, Zhang Y. Visible photoluminescence of porous silicon covered with an HfON dielectric layer[J]. J. Semicond., 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003.
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Visible photoluminescence of porous silicon covered with an HfON dielectric layer
doi: 10.1088/1674-4926/30/8/082003
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Abstract
With HfON filling the holes in porous silicon (PS), films with improved photoluminescence (PL) at roomtemperature were prepared. A strong blue peak at 425 nm and a red peak at 690 nm were observed in PL spectra. It is believed that the quantum-limited effect (QLE) and the polycrystalline structure of HfON is responsible forthe observed PL peaks. The stoichiometric proportion of N/O in the HfON layer has also a great influence on theintensity of blue light emission. Finally, the temperature quenching effect was observed to be greatly weakened forthe incorporation of HfON.-
Keywords:
- hafnium oxynitride,
- dielectrics,
- diffusion,
- luminescence,
- porosity
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References
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Proportional views
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