SEMICONDUCTOR MATERIALS

Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition

Liang Ting, Li Junhong, Du Wenlong, Xue Chenyang and Zhang Wendong

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Abstract: PZT thin films were successfully prepared through sol–gel. The annealing temperature was confirmed through DTA analyzing. The trigonal and tetragonal phase transition was analyzed through Raman scattering. The intensity of the A1(2TO) mode and the A1(3TO)T mode were enhanced with the increase of the annealing temperature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased.

Key words: PZT

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    Received: 18 August 2015 Revised: 15 June 2009 Online: Published: 01 August 2009

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      Liang Ting, Li Junhong, Du Wenlong, Xue Chenyang, Zhang Wendong. Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition[J]. Journal of Semiconductors, 2009, 30(8): 083001. doi: 10.1088/1674-4926/30/8/083001 Liang T, Li J H, Du W L, Xue C Y, Zhang W D. Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition[J]. J. Semicond., 2009, 30(8): 083001. doi:  10.1088/1674-4926/30/8/083001.Export: BibTex EndNote
      Citation:
      Liang Ting, Li Junhong, Du Wenlong, Xue Chenyang, Zhang Wendong. Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition[J]. Journal of Semiconductors, 2009, 30(8): 083001. doi: 10.1088/1674-4926/30/8/083001

      Liang T, Li J H, Du W L, Xue C Y, Zhang W D. Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition[J]. J. Semicond., 2009, 30(8): 083001. doi:  10.1088/1674-4926/30/8/083001.
      Export: BibTex EndNote

      Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition

      doi: 10.1088/1674-4926/30/8/083001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-11
      • Revised Date: 2009-06-15
      • Published Date: 2009-07-31

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