| Citation: |
Chen Yixin, Shen Guangdi, Li Jianjun, Han Jinru, Xu Chen. AlGaInP LEDs with surface anti-reflecting structure[J]. Journal of Semiconductors, 2009, 30(8): 084009. doi: 10.1088/1674-4926/30/8/084009
Chen Y X, Shen G D, Li J J, Han J R, Xu C. AlGaInP LEDs with surface anti-reflecting structure[J]. J. Semicond., 2009, 30(8): 084009. doi: 10.1088/1674-4926/30/8/084009.
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AlGaInP LEDs with surface anti-reflecting structure
doi: 10.1088/1674-4926/30/8/084009
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Abstract
:A kind of AlGaInP light emitting diode (LED) with surface anti-reflecting structure has been introduced to solve the problems of low light efficiency and restricted luminous intensity. The new structure can be demonstrated theoretically and experimentally, and LEDs with the new structure have higher on-axis luminous intensity and larger saturation current than conventional LEDs and LEDs with ITO film only, which is caused by higher external quantum efficiency and also higher internal quantum efficiency. The new LEDs are especially suitable for working at large injected currents. -
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