SEMICONDUCTOR DEVICES

Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells

Jiang Zhenyu, Dou Yuhua, Zhang Yu, Zhou Yuqin, Liu Fengzhen and Zhu Meifang

+ Author Affiliations

PDF

Abstract: Amorphous/crystalline silicon heterostructure solar cells have been fabricated by hot wire chemical vapor deposition (HWCVD) on textured p-type substrates. The influence of chemical polish (CP) etching and the post annealing process on the solar cell performance have been studied. The CP treatment leads to a reduction of stress in the i-layer by the slight rounding of the pyramid peaks, therefore improving the deposition coverage and the contact by each layer, which is beneficial for the performance of the solar cells. An optimized etching time of 10–15 s has been obtained. A post annealing process leads to a considerably improved open voltage (Voc), filled factor (FF), and conversion efficiency (η) by restructuring the deposited film and reducing the series resistance. An efficiency of 15.14% is achieved that represents the highest result reported in China for an amorphous/crystalline heterostructure solar cells based on the textured p-type substrates.

Key words: HIT solar cells; chemical polishing; post annealing; HWCVD

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4142 Times PDF downloads: 4016 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 02 March 2009 Online: Published: 01 August 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Jiang Zhenyu, Dou Yuhua, Zhang Yu, Zhou Yuqin, Liu Fengzhen, Zhu Meifang. Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells[J]. Journal of Semiconductors, 2009, 30(8): 084010. doi: 10.1088/1674-4926/30/8/084010 Jiang Z Y, Dou Y H, Zhang Y, Zhou Y Q, Liu F Z, Zhu M F. Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells[J]. J. Semicond., 2009, 30(8): 084010. doi:  10.1088/1674-4926/30/8/084010.Export: BibTex EndNote
      Citation:
      Jiang Zhenyu, Dou Yuhua, Zhang Yu, Zhou Yuqin, Liu Fengzhen, Zhu Meifang. Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells[J]. Journal of Semiconductors, 2009, 30(8): 084010. doi: 10.1088/1674-4926/30/8/084010

      Jiang Z Y, Dou Y H, Zhang Y, Zhou Y Q, Liu F Z, Zhu M F. Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells[J]. J. Semicond., 2009, 30(8): 084010. doi:  10.1088/1674-4926/30/8/084010.
      Export: BibTex EndNote

      Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells

      doi: 10.1088/1674-4926/30/8/084010
      • Received Date: 2015-08-18
      • Accepted Date: 2009-01-16
      • Revised Date: 2009-03-02
      • Published Date: 2009-07-31

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return