SEMICONDUCTOR INTEGRATED CIRCUITS

An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process

Gao Peijun, Oh N J and Min Hao

+ Author Affiliations

PDF

Abstract: A differential LC voltage controlled oscillator (VCO) employing parasitic vertical-NPN (V-NPN) transistors as a negative gm-cell is presented to improve the close-in phase noise. The V-NPN transistors have lower flicker noise compared to MOS transistors. DC and AC characteristics of the V-NPN transistors are measured to facilitate the VCO design. The proposed VCO is implemented in a 0.18 µm CMOS RF/mixed signal process, and the measurement results show the close-in phase noise is improved by 3.5–9.1 dB from 100 Hz to 10 kHz offset compared to that of a similar CMOS VCO. The proposed VCO consumes only 0.41 mA from a 1.5 V power supply

Key words: close-in phase noise vertical-NPN flicker noise VCO

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3984 Times PDF downloads: 1620 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 25 March 2009 Online: Published: 01 August 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Gao Peijun, Oh N J, Min Hao. An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process[J]. Journal of Semiconductors, 2009, 30(8): 085004. doi: 10.1088/1674-4926/30/8/085004 Gao P J, Oh N J, Min H. An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process[J]. J. Semicond., 2009, 30(8): 085004. doi:  10.1088/1674-4926/30/8/085004.Export: BibTex EndNote
      Citation:
      Gao Peijun, Oh N J, Min Hao. An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process[J]. Journal of Semiconductors, 2009, 30(8): 085004. doi: 10.1088/1674-4926/30/8/085004

      Gao P J, Oh N J, Min H. An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process[J]. J. Semicond., 2009, 30(8): 085004. doi:  10.1088/1674-4926/30/8/085004.
      Export: BibTex EndNote

      An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process

      doi: 10.1088/1674-4926/30/8/085004
      • Received Date: 2015-08-18
      • Accepted Date: 2009-01-16
      • Revised Date: 2009-03-25
      • Published Date: 2009-07-31

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return