| Citation: |
Zhang Qian, Zhang Yuming, Zhang Yimen. Analytical models for the base transit time of a bipolar transistor with double base epilayers[J]. Journal of Semiconductors, 2009, 30(9): 094003. doi: 10.1088/1674-4926/30/9/094003
Zhang Q, Zhang Y M, Zhang Y M. Analytical models for the base transit time of a bipolar transistor with double base epilayers[J]. J. Semicond., 2009, 30(9): 094003. doi: 10.1088/1674-4926/30/9/094003.
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Analytical models for the base transit time of a bipolar transistor with double base epilayers
doi: 10.1088/1674-4926/30/9/094003
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Abstract
The doping profile function of a double base epilayer is constructed according to drift–diffusion theory. Then an analytical model for the base transit time b is developed assuming a small-level injection based on the characteristics of the 4H-SiC material and the principle of the 4H-SiC BJTs. The device is numerically simulated and validated based on two-dimensional simulation models. The results show that the built-in electric field generated by the double base epilayer configuration can accelerate the carriers when transiting the base region and reduce the base transit time. From the simulation results, the base transit time reaches a minimal value when the ratio of L2/L1 is about 2.-
Keywords:
- 4H-SiC
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References
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Proportional views
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