| Citation: |
Li Yongfu, Tang Hengjing, Li Tao, Zhu Yaoming, Jiang Peilu, Qiao Hui, Li Xue, Gong Haimei. Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique[J]. Journal of Semiconductors, 2010, 31(1): 013002. doi: 10.1088/1674-4926/31/1/013002
Li Y F, Tang H J, Li T, Zhu Y M, Jiang P L, Qiao H, Li X, Gong H M. Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique[J]. J. Semicond., 2010, 31(1): 013002. doi: 10.1088/1674-4926/31/1/013002.
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Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique
doi: 10.1088/1674-4926/31/1/013002
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Abstract
To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. The laser-beam-induced-current (LBIC) technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be effectively suppressed, and the detector photo-sensitive area could be exactly defined.-
Keywords:
- InGaAs photodiode
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