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An X-band four-way combined GaN solid-state power amplifier

Chen Chi, Hao Yue, Feng Hui, Gu Wenping, Li Zhiming, Hu Shigang and Ma Teng

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Abstract: An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an AlGaN/GaN HEMT,Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under Vds = 27 V,Vgs = -4.0V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.

Key words: AlGaN/ GaN HEMTsolid-state power amplifiersWilkinson hybrid coupler

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    Received: 18 August 2015 Revised: 07 September 2009 Online: Published: 01 January 2010

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      Chen Chi, Hao Yue, Feng Hui, Gu Wenping, Li Zhiming, Hu Shigang, Ma Teng. An X-band four-way combined GaN solid-state power amplifier[J]. Journal of Semiconductors, 2010, 31(1): 015003. doi: 10.1088/1674-4926/31/1/015003 Chen C, Hao Y, Feng H, Gu W P, Li Z M, Hu S G, Ma T. An X-band four-way combined GaN solid-state power amplifier[J]. J. Semicond., 2010, 31(1): 015003. doi:  10.1088/1674-4926/31/1/015003.Export: BibTex EndNote
      Citation:
      Chen Chi, Hao Yue, Feng Hui, Gu Wenping, Li Zhiming, Hu Shigang, Ma Teng. An X-band four-way combined GaN solid-state power amplifier[J]. Journal of Semiconductors, 2010, 31(1): 015003. doi: 10.1088/1674-4926/31/1/015003

      Chen C, Hao Y, Feng H, Gu W P, Li Z M, Hu S G, Ma T. An X-band four-way combined GaN solid-state power amplifier[J]. J. Semicond., 2010, 31(1): 015003. doi:  10.1088/1674-4926/31/1/015003.
      Export: BibTex EndNote

      An X-band four-way combined GaN solid-state power amplifier

      doi: 10.1088/1674-4926/31/1/015003
      • Received Date: 2015-08-18
      • Accepted Date: 2009-07-06
      • Revised Date: 2009-09-07
      • Published Date: 2009-12-29

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