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Nanoscale strained-Si MOSFET physics and modeling approaches: a review

Amit Chaudhry, J. N. Roy and Garima Joshi

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Abstract: An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.

Key words: mobility

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    Received: 18 August 2015 Revised: 09 May 2010 Online: Published: 01 October 2010

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      Amit Chaudhry, J. N. Roy, Garima Joshi. Nanoscale strained-Si MOSFET physics and modeling approaches: a review[J]. Journal of Semiconductors, 2010, 31(10): 104001. doi: 10.1088/1674-4926/31/10/104001 A ChaudhryŽ, J N Roy, G Joshi. Nanoscale strained-Si MOSFET physics and modeling approaches: a review[J]. J. Semicond., 2010, 31(10): 104001. doi:  10.1088/1674-4926/31/10/104001.Export: BibTex EndNote
      Citation:
      Amit Chaudhry, J. N. Roy, Garima Joshi. Nanoscale strained-Si MOSFET physics and modeling approaches: a review[J]. Journal of Semiconductors, 2010, 31(10): 104001. doi: 10.1088/1674-4926/31/10/104001

      A ChaudhryŽ, J N Roy, G Joshi. Nanoscale strained-Si MOSFET physics and modeling approaches: a review[J]. J. Semicond., 2010, 31(10): 104001. doi:  10.1088/1674-4926/31/10/104001.
      Export: BibTex EndNote

      Nanoscale strained-Si MOSFET physics and modeling approaches: a review

      doi: 10.1088/1674-4926/31/10/104001
      • Received Date: 2015-08-18
      • Accepted Date: 2010-04-14
      • Revised Date: 2010-05-09
      • Published Date: 2010-10-05

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