| Citation: |
Pu Yan, Wang Liang, Yuan Tingting, Ouyang Sihua, Liu Guoguo, Luo Weijun, Liu Xinyu. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002
Pu Y, Wang L, Yuan T T, Ouyang S H, Liu G G, Luo W J, Liu X Y. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT[J]. J. Semicond., 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002.
Export: BibTex EndNote
|
Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT
doi: 10.1088/1674-4926/31/10/104002
-
Abstract
The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.-
Keywords:
- AlGaN/GaN HEMT,
- multi-bias CV curves,
- non-linear,
- CV model
-
References
-
Proportional views
DownLoad: