| Citation: |
Zhu Peng, Pan Liyang, Gu Haiming, Qiao Fengying, Deng Ning, Xu Jun. A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices[J]. Journal of Semiconductors, 2010, 31(10): 104008. doi: 10.1088/1674-4926/31/10/104008
Zhu P, Pan L Y, Gu H M, Qiao F Y, Deng N, Xu J. A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices[J]. J. Semicond., 2010, 31(10): 104008. doi: 10.1088/1674-4926/31/10/104008.
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A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices
doi: 10.1088/1674-4926/31/10/104008
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Abstract
A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. The trapped charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage.-
Keywords:
- charge pumping
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