SEMICONDUCTOR MATERIALS

Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE

Yang Ruixia, Wu Yibin, Niu Chenliang and Yang Fan

+ Author Affiliations

PDF

Abstract: The growth by molecular beam epitaxy of high quality GaAs epilayers on nonmisoriented GaAs(111)B substrates is reported. Growth control of the GaAs epilayers is achieved via in situ, real time measurement of the specular beam intensity of reflection high-energy electron diffraction (RHEED). Static surface phase maps of GaAs(111)B have been generated for a variety of incident As flux and substrate temperature conditions. The dependence of GaAs(111)B surface reconstruction phases on growth parameters is discussed. The (√19 × √19) surface reconstruction is identified to be the optimum starting surface for the latter growth of mirror-smooth epilayers. Regimes of growth conditions are optimized in terms of the static surface phase diagram and the temporal RHEED intensity oscillations.

Key words: GaAs(111)B RHEED surface reconstruction epilayer

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3649 Times PDF downloads: 2810 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 22 June 2010 Online: Published: 01 November 2010

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Yang Ruixia, Wu Yibin, Niu Chenliang, Yang Fan. Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE[J]. Journal of Semiconductors, 2010, 31(11): 113001. doi: 10.1088/1674-4926/31/11/113001 Yang R X, Wu Y B, Niu C L, Yang F. Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE[J]. J. Semicond., 2010, 31(11): 113001. doi:  10.1088/1674-4926/31/11/113001.Export: BibTex EndNote
      Citation:
      Yang Ruixia, Wu Yibin, Niu Chenliang, Yang Fan. Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE[J]. Journal of Semiconductors, 2010, 31(11): 113001. doi: 10.1088/1674-4926/31/11/113001

      Yang R X, Wu Y B, Niu C L, Yang F. Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE[J]. J. Semicond., 2010, 31(11): 113001. doi:  10.1088/1674-4926/31/11/113001.
      Export: BibTex EndNote

      Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE

      doi: 10.1088/1674-4926/31/11/113001
      • Received Date: 2015-08-18
      • Accepted Date: 2010-05-14
      • Revised Date: 2010-06-22
      • Published Date: 2010-10-31

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return