| Citation: |
Zhang Qian, Zhang Yuming, Zhang Yimen, Wang Yuehu. High temperature characterization of double base epilayer 4H-SiC BJTs[J]. Journal of Semiconductors, 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005
Zhang Q, Zhang Y M, Zhang Y M, Wang Y H. High temperature characterization of double base epilayer 4H-SiC BJTs[J]. J. Semicond., 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005.
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High temperature characterization of double base epilayer 4H-SiC BJTs
doi: 10.1088/1674-4926/31/11/114005
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Abstract
Based on the material characteristics and the operational principle of the double base epilayer BJTs, and according to the drift–diffusion and the carrier recombination theory, the common emitter current gain is calculated considering four recombination processes. Then its performance is analyzed under high temperature conditions. The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature. Meanwhile, the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity, and make an obvious current gain fall-off at a high collector current. -
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