SEMICONDUCTOR DEVICES

Process optimization of a deep trench isolation structure for high voltage SOI devices

Zhu Kuiying, Qian Qinsong, Zhu Jing and Sun Weifeng

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Abstract: The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail. An optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect; and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom. In order to improve the isolation performance of the deep trench, two feasible ways for optimizing the trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15–20 V at the same leakage current. The proposed new trench isolation process has been verified in the foundry's 0.5-μm HV SOI technology.

Key words: deep trench isolationSOIweak pointprocess optimization

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    Received: 18 August 2015 Revised: 23 July 2010 Online: Published: 01 December 2010

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      Zhu Kuiying, Qian Qinsong, Zhu Jing, Sun Weifeng. Process optimization of a deep trench isolation structure for high voltage SOI devices[J]. Journal of Semiconductors, 2010, 31(12): 124009. doi: 10.1088/1674-4926/31/12/124009 Zhu K Y, Qian Q S, Zhu J, Sun W F. Process optimization of a deep trench isolation structure for high voltage SOI devices[J]. J. Semicond., 2010, 31(12): 124009. doi:  10.1088/1674-4926/31/12/124009.Export: BibTex EndNote
      Citation:
      Zhu Kuiying, Qian Qinsong, Zhu Jing, Sun Weifeng. Process optimization of a deep trench isolation structure for high voltage SOI devices[J]. Journal of Semiconductors, 2010, 31(12): 124009. doi: 10.1088/1674-4926/31/12/124009

      Zhu K Y, Qian Q S, Zhu J, Sun W F. Process optimization of a deep trench isolation structure for high voltage SOI devices[J]. J. Semicond., 2010, 31(12): 124009. doi:  10.1088/1674-4926/31/12/124009.
      Export: BibTex EndNote

      Process optimization of a deep trench isolation structure for high voltage SOI devices

      doi: 10.1088/1674-4926/31/12/124009
      • Received Date: 2015-08-18
      • Accepted Date: 2010-06-30
      • Revised Date: 2010-07-23
      • Published Date: 2010-11-25

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