J. Semicond. > 2010, Volume 31 > Issue 12 > 124012, doi: 10.1088/1674-4926/31/12/124012
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SEMICONDUCTOR DEVICES

Effect of collector bias current on the linearity of common-emitter BJT amplifiers

Li Kun, Teng Jianfu and Xuan Xiuwei

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Abstract: Using a Volterra series, an explicit formula is derived for the connection between input 3rd-order intercept point and collector bias current (ICQ) in a common–emitter bipolar junction transistor amplifier. The analysis indicates that the larger ICQ is, the more linear the amplifier is. Furthermore, this has been verified by experiment. This study also integrates a method called dynamic bias current for expanding the dynamic range of an LNA (low noise amplifier) as an application of the analysis result obtained above. IMR3 (3rd-order intermodulation rate) is applied to evaluate the LNA's performance with and without adopting this method in this study.

Key words: IIP3

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    Received: 18 August 2015 Revised: 16 August 2010 Online: Published: 01 December 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(12): 124012
      Li Kun, Teng Jianfu, Xuan Xiuwei. Effect of collector bias current on the linearity of common-emitter BJT amplifiers[J]. Journal of Semiconductors, 2010, 31(12): 124012. doi: 10.1088/1674-4926/31/12/124012 Li K, Teng J F, Xuan X W. Effect of collector bias current on the linearity of common-emitter BJT amplifiers[J]. J. Semicond., 2010, 31(12): 124012. doi:  10.1088/1674-4926/31/12/124012.Export: BibTex EndNote
      Citation:
      Li Kun, Teng Jianfu, Xuan Xiuwei. Effect of collector bias current on the linearity of common-emitter BJT amplifiers[J]. Journal of Semiconductors, 2010, 31(12): 124012. doi: 10.1088/1674-4926/31/12/124012

      Li K, Teng J F, Xuan X W. Effect of collector bias current on the linearity of common-emitter BJT amplifiers[J]. J. Semicond., 2010, 31(12): 124012. doi:  10.1088/1674-4926/31/12/124012.
      Export: BibTex EndNote
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      Effect of collector bias current on the linearity of common-emitter BJT amplifiers

      doi: 10.1088/1674-4926/31/12/124012

      • School of Electronic and Information Engineering, Tianjin University of Technology, Tianjin 300384, China

      • School of Electronic and Information Engineering, Tianjin University of Technology, Tianjin 300384, China

      • School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China

      • School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China

      • Received Date: 2015-08-18
      • Accepted Date: 2010-05-25
      • Revised Date: 2010-08-16
      • Published Date: 2010-11-25

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