| Citation: |
Wang Dongfang, Chen Xiaojuan, Liu Xinyu. A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate[J]. Journal of Semiconductors, 2010, 31(2): 024001. doi: 10.1088/1674-4926/31/2/024001
Wang D F, Chen X J, Liu X Y. A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate[J]. J. Semicond., 2010, 31(2): 024001. doi: 10.1088/1674-4926/31/2/024001.
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A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
doi: 10.1088/1674-4926/31/2/024001
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Abstract
This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with a gate width of 0.5 mm and a gate length of 0.35 μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz. Under VDS = 30 V, CW operating conditions at 14 GHz, the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a power added efficiency of 41%. Under pulse operating conditions, the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W. The power density reaches 3.4 W/mm.-
Keywords:
- AlGaN/GaN HEMT,
- Ku band,
- power
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References
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Proportional views
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