| Citation: |
Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji. Insulated gate bipolar transistor with trench gate structure of accumulation channel[J]. Journal of Semiconductors, 2010, 31(3): 034002. doi: 10.1088/1674-4926/31/3/034002
Qian M L, Li Z H, Zhang B, Li Z J. Insulated gate bipolar transistor with trench gate structure of accumulation channel[J]. J. Semicond., 2010, 31(3): 034002. doi: 10.1088/1674-4926/31/3/034002.
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Insulated gate bipolar transistor with trench gate structure of accumulation channel
doi: 10.1088/1674-4926/31/3/034002
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Abstract
An accumulation channel trench gate insulated gate bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT (CT-IGBT) are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.-
Keywords:
- ACT-IGBT
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References
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Proportional views
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