SEMICONDUCTOR INTEGRATED CIRCUITS

A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS

Zhang Changchun, Wang Zhigong, Shi Si and Guo Yufeng

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Abstract: Based on the devised system-level design methodology, a 2.5-Gb/s monolithic bang-bang phase-lockedclock and data recovery (CDR) circuit has been designed and fabricated in SMIC’s 0.18-μm CMOS technology. The Pottbacker phase frequency detector and a differential 4-stage inductorless ring VCO are adopted, where an additional current source is added to the VCO cell to improve the linearity of the VCO characteristic. The CDR has an active area of 340 × 440 μm2, and consumes a power of only about 60 mW from a 1.8 V supply voltage, with an input sensitivity of less than 25 mV, and an output single-ended swing of more than 300 mV. It has a pull-in range of 800 MHz, and a phase noise of –111.54 dBc/Hz at 10 kHz offset. The CDR works reliably at any input data rate between 1.8 Gb/s and 2.6 Gb/s without any need for reference clock, off-chip tuning, or external components.

Key words: clock and data recovery phase frequency detector voltage-controlled oscillator bang-bang jitter

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    Received: 18 August 2015 Revised: 27 October 2009 Online: Published: 01 March 2010

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      Zhang Changchun, Wang Zhigong, Shi Si, Guo Yufeng. A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS[J]. Journal of Semiconductors, 2010, 31(3): 035007. doi: 10.1088/1674-4926/31/3/035007 Zhang C C, Wang Z G, Shi S, Guo Y F. A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS[J]. J. Semicond., 2010, 31(3): 035007. doi:  10.1088/1674-4926/31/3/035007.Export: BibTex EndNote
      Citation:
      Zhang Changchun, Wang Zhigong, Shi Si, Guo Yufeng. A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS[J]. Journal of Semiconductors, 2010, 31(3): 035007. doi: 10.1088/1674-4926/31/3/035007

      Zhang C C, Wang Z G, Shi S, Guo Y F. A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS[J]. J. Semicond., 2010, 31(3): 035007. doi:  10.1088/1674-4926/31/3/035007.
      Export: BibTex EndNote

      A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS

      doi: 10.1088/1674-4926/31/3/035007
      • Received Date: 2015-08-18
      • Accepted Date: 2009-09-07
      • Revised Date: 2009-10-27
      • Published Date: 2010-02-08

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