SEMICONDUCTOR TECHNOLOGY

Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

Li Yongliang and Xu Qiuxia

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Abstract: The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 ℃ for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si–N bonds that dissolves very slowly in HF-based solutions. Existing Si–N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

Key words: HfSiON high-k wet etching interfacial layer

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    Received: 18 August 2015 Revised: 27 October 2009 Online: Published: 01 March 2010

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      Li Yongliang, Xu Qiuxia. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions[J]. Journal of Semiconductors, 2010, 31(3): 036001. doi: 10.1088/1674-4926/31/3/036001 Li Y L, Xu Q X. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions[J]. J. Semicond., 2010, 31(3): 036001. doi: 10.1088/1674-4926/31/3/036001.Export: BibTex EndNote
      Citation:
      Li Yongliang, Xu Qiuxia. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions[J]. Journal of Semiconductors, 2010, 31(3): 036001. doi: 10.1088/1674-4926/31/3/036001

      Li Y L, Xu Q X. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions[J]. J. Semicond., 2010, 31(3): 036001. doi: 10.1088/1674-4926/31/3/036001.
      Export: BibTex EndNote

      Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

      doi: 10.1088/1674-4926/31/3/036001
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      国家基础研究重大项目基金

      • Received Date: 2015-08-18
      • Accepted Date: 2009-09-06
      • Revised Date: 2009-10-27
      • Published Date: 2010-02-08

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