SEMICONDUCTOR DEVICES

An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure

Pu Hongbin, Cao Lin, Ren Jie, Chen Zhiming and Nan Yagong

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Abstract: An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively.

Key words: SiC/SiCGe superjunction optically controlled transistor

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    Received: 18 August 2015 Revised: Online: Published: 01 April 2010

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      Pu Hongbin, Cao Lin, Ren Jie, Chen Zhiming, Nan Yagong. An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure[J]. Journal of Semiconductors, 2010, 31(4): 044001. doi: 10.1088/1674-4926/31/4/044001 Pu H B, Cao L, Ren J, Chen Z M, Nan Y G. An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure[J]. J. Semicond., 2010, 31(4): 044001. doi: 10.1088/1674-4926/31/4/044001.Export: BibTex EndNote
      Citation:
      Pu Hongbin, Cao Lin, Ren Jie, Chen Zhiming, Nan Yagong. An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure[J]. Journal of Semiconductors, 2010, 31(4): 044001. doi: 10.1088/1674-4926/31/4/044001

      Pu H B, Cao L, Ren J, Chen Z M, Nan Y G. An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure[J]. J. Semicond., 2010, 31(4): 044001. doi: 10.1088/1674-4926/31/4/044001.
      Export: BibTex EndNote

      An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure

      doi: 10.1088/1674-4926/31/4/044001
      • Received Date: 2015-08-18

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