| Citation: |
Sun Lingling, Lü Binyi, Liu Jun, Chen Lei. RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET[J]. Journal of Semiconductors, 2010, 31(4): 044009. doi: 10.1088/1674-4926/31/4/044009
Sun L L, Lü B, Liu J, Chen L. RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET[J]. J. Semicond., 2010, 31(4): 044009. doi: 10.1088/1674-4926/31/4/044009.
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RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET
doi: 10.1088/1674-4926/31/4/044009
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Abstract
A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC’s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters (50 MHz–40 GHz), and power characteristics, which shows that our model is accurate and reliable.-
Keywords:
- RF-MOSFET
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