| Citation: |
I. Murtaza, Kh S. Karimov, Zubair Ahmad, I. Qazi, M. Mahroof-Tahir, T. A. Khan, T. Amin. Humidity sensitive organic field effect transistor[J]. Journal of Semiconductors, 2010, 31(5): 054001. doi: 10.1088/1674-4926/31/5/054001
I Murtaza, K S Karimov, Z Ahmad, I Qazi, M Mahroof-Tahir, T A Khan, T Amin. Humidity sensitive organic field effect transistor[J]. J. Semicond., 2010, 31(5): 054001. doi: 10.1088/1674-4926/31/5/054001.
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Humidity sensitive organic field effect transistor
doi: 10.1088/1674-4926/31/5/054001
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Abstract
This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor. The organic field effect transistor was fabricated on thoroughly cleaned glass substrate, in which the junction between the metal gate and the organic channel plays the role of gate dielectric. Thin films of organic semiconductor copper phthalocynanine (CuPc) and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes. The output and transfer characteristics of the fabricated device were performed. The effect of humidity on the drain current, drain current-drain voltage relationship, and threshold voltage was investigated. It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.-
Keywords:
- organic field effect transistor
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