| Citation: |
Lan Bo, Guo Qi, Sun Jing, Cui Jiangwei, Li Maoshun, Chen Rui, Fei Wuxiong, Zhao Yun. Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions[J]. Journal of Semiconductors, 2010, 31(5): 054004. doi: 10.1088/1674-4926/31/5/054004
Lan B, Guo Q, Sun J, Cui J W, Li M S, Chen R, Fei W X, Zhao Y. Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions[J]. J. Semicond., 2010, 31(5): 054004. doi: 10.1088/1674-4926/31/5/054004.
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Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions
doi: 10.1088/1674-4926/31/5/054004
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Abstract
The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.-
Keywords:
- PMOSFETs
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References
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Proportional views
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