J. Semicond. > 2010, Volume 31 > Issue 6 > 064009, doi: 10.1088/1674-4926/31/6/064009
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SEMICONDUCTOR DEVICES

Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

Zhao Jiate, Zhao Yong, Wang Wanjun, Hao Yinlei, Zhou Qiang, Yang Jianyi, Wang Minghua and Jiang Xiaoqing

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Abstract: The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation. Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices, especially for small structure ones. For a device with a 1000 μm modulation length, the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions. A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.

Key words: plasma dispersion effect

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    Received: 18 August 2015 Revised: 26 January 2010 Online: Published: 01 June 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(6): 064009
      Zhao Jiate, Zhao Yong, Wang Wanjun, Hao Yinlei, Zhou Qiang, Yang Jianyi, Wang Minghua, Jiang Xiaoqing. Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices[J]. Journal of Semiconductors, 2010, 31(6): 064009. doi: 10.1088/1674-4926/31/6/064009 Zhao J T, Zhao Y, Wang W J, Hao Y L, Zhou Q, Yang J Y, Wang M H, Jiang X Q. Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices[J]. J. Semicond., 2010, 31(6): 064009. doi: 10.1088/1674-4926/31/6/064009.Export: BibTex EndNote
      Citation:
      Zhao Jiate, Zhao Yong, Wang Wanjun, Hao Yinlei, Zhou Qiang, Yang Jianyi, Wang Minghua, Jiang Xiaoqing. Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices[J]. Journal of Semiconductors, 2010, 31(6): 064009. doi: 10.1088/1674-4926/31/6/064009

      Zhao J T, Zhao Y, Wang W J, Hao Y L, Zhou Q, Yang J Y, Wang M H, Jiang X Q. Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices[J]. J. Semicond., 2010, 31(6): 064009. doi: 10.1088/1674-4926/31/6/064009.
      Export: BibTex EndNote
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      Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

      doi: 10.1088/1674-4926/31/6/064009

      • Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

      • Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

      • Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

      • Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

      • Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

      • Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

      • Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

      • Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-12-31
      • Revised Date: 2010-01-26
      • Published Date: 2010-06-03

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