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Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

Wei Kangliang, Liu Xiaoyan, Du Gang and Han Ruqi

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Abstract: We demonstrate a two-dimensional (2D) full-band ensemble Monte–Carlo simulator for heterostructures, which deals with carrier transport in two different semiconductor materials simultaneously as well as at the boundary by solving self-consistently the 2D Poisson and Boltzmann transport equations (BTE). The infrastructure of this simulator, including the energy bands obtained from the empirical pseudo potential method, various scattering mechanics employed, and the appropriate treatment of the carrier transport at the boundary between two different semiconductor materials, is also described. As verification and calibration, we have performed a simulation on two types of silicon–germanium (Si–Ge) heterojunctions with different doping profiles—the p–p homogeneous type and the n–p inhomogeneous type. The current–voltage characteristics are simulated, and the distributions of potential and carrier density are also plotted, which show the validity of our simulator.

Key words: heterostructureMonte Carlo simulationcarrier transport

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    Received: 18 August 2015 Revised: 18 March 2010 Online: Published: 01 August 2010

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      Wei Kangliang, Liu Xiaoyan, Du Gang, Han Ruqi. Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method[J]. Journal of Semiconductors, 2010, 31(8): 084004. doi: 10.1088/1674-4926/31/8/084004 Wei K L, Liu X Y, Du G, Han R Q. Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method[J]. J. Semicond., 2010, 31(8): 084004. doi: 10.1088/1674-4926/31/8/084004.Export: BibTex EndNote
      Citation:
      Wei Kangliang, Liu Xiaoyan, Du Gang, Han Ruqi. Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method[J]. Journal of Semiconductors, 2010, 31(8): 084004. doi: 10.1088/1674-4926/31/8/084004

      Wei K L, Liu X Y, Du G, Han R Q. Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method[J]. J. Semicond., 2010, 31(8): 084004. doi: 10.1088/1674-4926/31/8/084004.
      Export: BibTex EndNote

      Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

      doi: 10.1088/1674-4926/31/8/084004
      • Received Date: 2015-08-18
      • Accepted Date: 2010-01-16
      • Revised Date: 2010-03-18
      • Published Date: 2010-07-31

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