SEMICONDUCTOR DEVICES

A new integrated SOI power device based on self-isolation technology

Gao Huanmei, Luo Xiaorong, Zhang Wei, Deng Hao and Lei Tianfei

+ Author Affiliations

PDF

Abstract: A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Furthermore, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μ m, but also modulate the lateral electric field distribution, resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.

Key words: buried n-islandsself-isolationbreakdown voltageelectric fieldSOI

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4084 Times PDF downloads: 2316 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 29 March 2010 Online: Published: 01 August 2010

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Gao Huanmei, Luo Xiaorong, Zhang Wei, Deng Hao, Lei Tianfei. A new integrated SOI power device based on self-isolation technology[J]. Journal of Semiconductors, 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012 Gao H M, Luo X R, Zhang W, Deng H, Lei T F. A new integrated SOI power device based on self-isolation technology[J]. J. Semicond., 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012.Export: BibTex EndNote
      Citation:
      Gao Huanmei, Luo Xiaorong, Zhang Wei, Deng Hao, Lei Tianfei. A new integrated SOI power device based on self-isolation technology[J]. Journal of Semiconductors, 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012

      Gao H M, Luo X R, Zhang W, Deng H, Lei T F. A new integrated SOI power device based on self-isolation technology[J]. J. Semicond., 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012.
      Export: BibTex EndNote

      A new integrated SOI power device based on self-isolation technology

      doi: 10.1088/1674-4926/31/8/084012
      • Received Date: 2015-08-18
      • Accepted Date: 2009-11-20
      • Revised Date: 2010-03-29
      • Published Date: 2010-07-31

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return