| Citation: |
Liu Zhen, Wang Xiaofeng, Yang Hua, Duan Yao, Zeng Yiping. A Ga-doped ZnO transparent conduct layer for GaN-based LEDs[J]. Journal of Semiconductors, 2010, 31(9): 094002. doi: 10.1088/1674-4926/31/9/094002
Liu Z, Wang X F, Yang H, Duan Y, Zeng Y P. A Ga-doped ZnO transparent conduct layer for GaN-based LEDs[J]. J. Semicond., 2010, 31(9): 094002. doi: 10.1088/1674-4926/31/9/094002.
Export: BibTex EndNote
|
A Ga-doped ZnO transparent conduct layer for GaN-based LEDs
doi: 10.1088/1674-4926/31/9/094002
-
Abstract
An 8 μm thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2.24 ± 0.21 eV) resulting from the formation of Ga2O3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage. -
References
-
Proportional views
DownLoad: