| Citation: |
Zhou Lei, Jin Zhi, Su Yongbo, Wang Xiantai, Chang Hudong, Xu Anhuai, Qi Ming. Ultra high-speed InP/InGaAs SHBTs with ft and fmax of 185 GHz[J]. Journal of Semiconductors, 2010, 31(9): 094007. doi: 10.1088/1674-4926/31/9/094007
Zhou L, Jin Z, Su Y B, Wang X T, Chang H D, Xu A H, Qi M. Ultra high-speed InP/InGaAs SHBTs with ft and fmax of 185 GHz[J]. J. Semicond., 2010, 31(9): 094007. doi: 10.1088/1674-4926/31/9/094007.
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Ultra high-speed InP/InGaAs SHBTs with ft and fmax of 185 GHz
doi: 10.1088/1674-4926/31/9/094007
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Abstract
An InP/InGaAs single heterojunction bipolar transistor (SHBT) with high maximum oscillation frequency (fmax) and high cutoff frequency (ft) is reported. Efforts have been made to maximize fmax and ft simultaneously including optimizing the epitaxial structure, base–collector mesa over-etching and base surface preparation. The measured ft and fmax both reached 185 GHz with an emitter size of 1 × 20 μm2, which is the highest fmax for SHBTs in mainland China. The device is suitable for ultra-high speed digital circuits and low power analog applications. -
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